Project Description

Semiconductor – Back End Application

Back Grinding Wheel – Nano Pol(Vitrified)

· Wafer surface roughness and die strength can be improved
· Grinding stress and wafer edge chipping can be reduced
· Diamond at the tip can be distributed consistently
· Porosity, pore shape and pore size control can be adjusted
· Possible to grind Si wafer up to 17㎛ (Ultra thin wafer)
· Outstanding grinding ability for TSV and normal(for finger print) compound wafer